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In this application domain, we have 4 main research tracks:
Testing for wearability and reliability of TPU lamination method in e-textiles.
Paula Veske (UGent) , Frederick Bossuyt (UGent) and Jan Vanfleteren (UGent)
(2022) APPLIED SCIENCES-BASEL. 10(24).”
Development and washing reliability testing of a
stretchable circuit on knit fabric.
“Paula Veske (UGent) , Pieter Bauwens (UGent) , Frederick Bossuyt (UGent) , Tom Sterken
(UGent) and Jan Vanfleteren (UGent)
(2020) APPLIED SCIENCES-BASEL. 10(24).”
Vacuum lamination of a stretchable sensor
system in polypropylene.
“Pieter Bauwens (UGent) , Frederick Bossuyt (UGent) , Jan Patrick Deckers and Jan Vanfleteren (UGent)
(2020) 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC).”
The integration of electronic circuits in plastics using injection technologies : a literature review.
“Mona Bakr (UGent) , Frederick Bossuyt (UGent) , Jan Vanfleteren (UGent)
(2022) 2022 Flexible and Printed Electronics
Solar cells integration in over-molded printed electronics.
“Mona Bakr (UGent) , Pieter Bauwens (UGent) , Frederick Bossuyt (UGent) , Jan Vanfleteren (UGent) , Imen Chtioui
and Wim Christiaens
(2020) 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC), Proceedings.”
Flexible microsystems using over-molding technology.
“Mona Bakr (UGent) , Frederick Bossuyt (UGent) , Jan Vanfleteren (UGent) and Yibo Su
(2020) PROCEDIA MANUFACTURING. 52. p.26-31.”
Effect of overmolding process on the integrity of electronic circuits.
“Mona Bakr (UGent) , Yibo Su, Frederick Bossuyt (UGent) and Jan Vanfleteren (UGent)
(2019) 2019 22nd European Microelectronics and Packaging Conference & Exhibition (EMPC). In European
Microelectronics Packaging Conference.”
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs.
A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna
(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs.
Arno Stockman (UGent) , Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens and Benoit Bakeroot (UGent)
(2021) IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 21(2). p.169-175
Surface-potential-based compact modeling of p-GaN gate HEMTs.
Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot (UGent) , Jun Liu and Stefaan Decoutere
(2021) MICROMACHINES. 12(2).